Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3
نویسندگان
چکیده
In this paper, two dielectric layers of Al2O3 and Gd2O3 were prepared by an atomic layer deposition (ALD) magnetron sputtering (SD), respectively. Based on this, a metal-oxide-semiconductor field-effect transistor (MOSFET) was successfully hydrogen-terminated single-crystal diamond (H-diamond), its related properties studied. The results showed that device had typical p-type channel MOSFET output transfer characteristics. addition, the maximum current 15.3 mA/mm, constant 24.8. effective mobility with Gd2O3/Al2O3 evaluated to be 182.1 cm2/Vs. To best our knowledge, bilayer first used in potential for application.
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ژورنال
عنوان ژورنال: Crystals
سال: 2023
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst13050783